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MMBTSA1365
PNP Silicon Epitaxial Planar Transistor
for high current drive application The transistor is subdivided into three groups E, F and G according to its DC current gain.
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol -VCBO -VCEO -VEBO -IC -ICM Ptot Tj TS
Value 25 20 4 700 1 200 150 - 55 to + 150
Unit V V V mA A mW
O
C C
O
Characteristics at Ta = 25 OC
Parameter DC Current Gain at -VCE = 4 V, -IC = 100 mA E F G Symbol hFE hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) fT Min. 150 250 400 25 20 4 Typ. 180 Max. 300 500 800 1 1 0.5 Unit A A V V V V MHz
Collector Cutoff Current at -VCB = 25 V Emitter Cutoff Current at -VEB = 2 V Collector Base Breakdown Voltage at -IC = 10 A Collector Emitter Breakdown Voltage at -IC = 100 A Emitter Base Breakdown Voltage at -IE = 10 A Collector Saturation Voltage at -IC = 500 mA, -IB = 25 mA Transition Frequency at -VCE = 6 V, IE = 10 mA
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 06/12/2006
MMBTSA1365
Power Dissipation vs Ambient Temperature
300
Power Dissipation: Ptot (mW)
250
200
150
100
50 0 0 25 50 75 100
O
125
150
Ambient Temperature: Ta ( C)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 06/12/2006

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